I-905nmAPD uthotho lwetyhubhu enye ebonisiweyo

905nmAPD uthotho ityhubhu enye

Umzekelo: GD5210Y-2-2-T046 / GD5210Y-2-5-T046 / GD5210Y-2-8-T046 / GD5210Y-2-2-LCC3 / GD5210Y-2-5-LCC3 / GD5210Y-2-2P GD5210Y-2-5-P

Inkcazelo emfutshane:

Isixhobo yi-silicon avalanche photodiode, impendulo ye-spectral isuka ekukhanyeni okubonakalayo ukuya kwi-infrared ekufutshane, kunye ne-peak response wavelength yi-905nm.

fumana ikhowuti Khuphela

IParameter yobuGcisa

IIMBONAKALO

ISICELO

Iithegi zeMveliso

Iimpawu zombane wefoto (＠Ta＝22±3℃)
Umzekelo		GD5210Y-2-2-T046	GD5210Y-2-5-T046	GD5210Y-2-8-T046	I-GD5210Y-2-2-LCC3	I-GD5210Y-2-5-LCC3	GD5210Y-2-2-P	GD5210Y-2-5-P	Uluhlu
Ifomu yephakheji		UKUYA-46	UKUYA-46	UKUYA-46	I-LCC3	I-LCC3	ukupakishwa kweplastiki	ukupakishwa kweplastiki	PCB
Umphezulu wedayamitha yefotoensitive (mm)		0.23	0.50	0.80	0.23	0.50	0.23	0.50	eyenzelwe wena
Uluhlu lweempendulo zeSpectral (nm)		400~1100	400~1100	400~1100	400~1100	400~1100	400~1100	400~1100	400~1100
Incopho yobude bewavenge (nm)		905	905	905	905	905	905	905	905
Ukusabela λ=905nm Φ=1μW M=100 (A/W)		55	55	55	55	55	55	55	55
Ubumnyama bangoku M=100(nA)	Isiqhelo	0.2	0.4	0.8	0.2	0.4	0.2	0.4	Ngokutsho photosensitivity
Ubumnyama bangoku M=100(nA)	Ubuninzi	1.0	1.0	2.0	1.0	1.0	1.0	1.0	Icala elinye
Ixesha lokuphendula λ=905nm R1=50Ω(ns)		0.6	0.6	0.6	0.6	0.6	0.6	0.6	Ngokomphezulu we-photosensitive
I-coefficient yobushushu bombane osebenzayo T=-40℃~85℃(V/℃)		0.9	0.9	0.9	0.9	0.9	0.9	0.9	0.9
Amandla onke M=100 f=1MHz(pF)		1.0	1.2	2.0	1.0	1.2	1.0	1.2	Ngokomphezulu we-photosensitive
Ukuqhekeka kombane IR=10μA(V)	Ubuncinane	130	130	130	130	130	130	130	160
Ukuqhekeka kombane IR=10μA(V)	Ubuninzi	220	220	220	220	220	220	220	200

Ngaphambili: 800nmAPD uthotho ityhubhu enye

Okulandelayo: 1064nmAPD uthotho ityhubhu enye

Isakhiwo seChip sePlanethi engaphambili

Impendulo yesantya esiphezulu

Inzuzo ephezulu

Umthamo ophantsi wokuhlangana

Ingxolo ephantsi

Ubungakanani boluhlu kunye nomphezulu wefotosensitive unokwenziwa ngokwezifiso

Uluhlu lweLaser

Lidar

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