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800nmAPD uthotho ityhubhu enye

800nmAPD uthotho ityhubhu enye

Umzekelo: GD5210Y-1-2-T046 / GD5210Y-1-5-T046 / GD5210Y-1-2-LCC3 / GD5210Y-1-5 -LCC3

Inkcazelo emfutshane:

Isixhobo yi-silicon avalanche photodiode, impendulo ye-spectral isuka ekukhanyeni okubonakalayo ukuya kwi-infrared ekufutshane, kunye ne-peak response wavelength yi-800nm.


  • f614effe
  • 6dac49b1
  • 46bbb79b
  • 374a78c3

IParameter yobuGcisa

IIMBONAKALO

ISICELO

Iithegi zeMveliso

Iimpawu zombane wefoto (@Ta=22±3)

Umzekelo

I-GD5210Y-1-2-T046

GD5210Y-1-5-T046

I-GD5210Y-1-2-LCC3

GD5210Y-1-5

-LCC3

Ifomu yephakheji

UKUYA-46

UKUYA-46

I-LCC3

I-LCC3

Umphezulu wedayamitha yefotoensitive (mm)

0.23

0.50

0.23

0.50

Uluhlu lweempendulo zeSpectral (nm)

400~1100

400~1100

400~1100

400~1100

Incopho yobude bewavenge (nm)

800

800

800

800

λ=800nm ​​Φ=1μW M=100(A/W)

55

55

55

55

Umsinga omnyama

Isiqhelo

0.05

0.10

0.05

0.10

M=100(nA)

Ubuninzi

0.2

0.4

0.2

0.4

Ixesha lokuphendula λ=800nm ​​R1=50Ω(ns)

0.3

0.3

0.3

0.3

I-coefficient yobushushu bombane osebenzayo T=-40℃~85℃(V/℃)

0.5

0.5

0.5

0.5

Umthamo uwonke M=100 f=1MHz(pF)

1.5

3.0

1.5

3.0

Uqhawulo lombane IR=10μA(V)

Ubuncinane

80

80

80

80

Ubuninzi

160

160

160

160


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    Inzuzo ephezulu

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