I-1064nmAPD uthotho lwetyhubhu enye ebonisiweyo

1064nmAPD uthotho ityhubhu enye

Umzekelo: GD5210Y-3-500 / GD5210Y-3-800 / GD5211Y

Inkcazelo emfutshane:

Isixhobo yi-silicon avalanche photodiode, uluhlu lwempendulo ye-spectral ukusuka ekukhanyeni okubonakalayo ukuya kwi-infrared kufuphi ne-infrared, i-peak response wavelength yi-980nm, kwaye impendulo kwi-1064nm inokufikelela kwi-36A / W.

fumana ikhowuti Khuphela

IParameter yobuGcisa

IIMBONAKALO

ISICELO

Iithegi zeMveliso

Iimpawu zombane wefoto (＠Ta＝22±3℃)
Umzekelo			GD5210Y-3-500	GD5210Y-3-800	GD5211Y
Ifomu yephakheji			UKUYA-46	UKUYA-46	UKUYA-52
Umphezulu wedayamitha yefotoensitive (mm)			0.5	0.8	0.8
Uluhlu lweempendulo zeSpectral (nm)			400~1100	400~1100	400~1100
Incopho yobude bewavenge (nm)			980	980	980
Ukusabela	λ=905nm Φ=1μW M=100		58	58	58
Ukusabela	λ=1064nm Φ=1μW M=100		36	36	36
Umsinga omnyama M=100(nA)		Isiqhelo	2	4	10
Umsinga omnyama M=100(nA)		Ubuninzi	20	20	20
Ixesha lokuphendula λ=800nm R1=50Ω(ns)			2	3	3.5
I-coefficient yobushushu bombane osebenzayo T=-40℃~85℃(V/℃)			2.2	2.2	2.2
Umthamo uwonke M=100 f=1MHz(pF)			1.0	1.5	3.5
Ukutshatyalaliswa kwamandla ombane IR=10μA(V)		Ubuncinane	220	220	350
Ukutshatyalaliswa kwamandla ombane IR=10μA(V)		Ubuninzi	580	580	500

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