800nmAPD uthotho ityhubhu enye
Iimpawu zombane wefoto (@Ta=22±3℃) | |||||
Umzekelo | I-GD5210Y-1-2-T046 | GD5210Y-1-5-T046 | I-GD5210Y-1-2-LCC3 | GD5210Y-1-5 -LCC3 | |
Ifomu yephakheji | UKUYA-46 | UKUYA-46 | I-LCC3 | I-LCC3 | |
Umphezulu wedayamitha yefotoensitive (mm) | 0.23 | 0.50 | 0.23 | 0.50 | |
Uluhlu lweempendulo zeSpectral (nm) | 400~1100 | 400~1100 | 400~1100 | 400~1100 | |
Incopho yobude bewavenge (nm) | 800 | 800 | 800 | 800 | |
λ=800nm Φ=1μW M=100(A/W) | 55 | 55 | 55 | 55 | |
Umsinga omnyama | Isiqhelo | 0.05 | 0.10 | 0.05 | 0.10 |
M=100(nA) | Ubuninzi | 0.2 | 0.4 | 0.2 | 0.4 |
Ixesha lokuphendula λ=800nm R1=50Ω(ns) | 0.3 | 0.3 | 0.3 | 0.3 | |
I-coefficient yobushushu bombane osebenzayo T=-40℃~85℃(V/℃) | 0.5 | 0.5 | 0.5 | 0.5 | |
Umthamo uwonke M=100 f=1MHz(pF) | 1.5 | 3.0 | 1.5 | 3.0 | |
Uqhawulo lombane IR=10μA(V) | Ubuncinane | 80 | 80 | 80 | 80 |
Ubuninzi | 160 | 160 | 160 | 160 |
Isakhiwo seChip sePlanethi engaphambili
Impendulo yesantya esiphezulu
Inzuzo ephezulu
Umthamo ophantsi wokuhlangana
Ingxolo ephantsi
Uluhlu lweLaser
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