Iimodyuli ze-InGaAs ze-APD ezibonisiweyo

Iimodyuli ze-InGaAs APD

Umzekelo: GD6510Y/ GD6511Y/ GD6512Y

Inkcazelo emfutshane:

Yimodyuli ye-indium gallium arsenide avalanche photodiode kunye nesekethe yokukhulisa kwangaphambili eyenza ukuba uphawu olubuthathaka lwangoku lwandiswe kwaye luguqulelwe kwisignali yombane ukufezekisa inkqubo yokuguqulwa kwe-photon-photoelectric-signal amplification.

fumana ikhowuti Khuphela

IParameter yobuGcisa

Iithegi zeMveliso

Iimbonakalo

Umphambili wakhanyisa itshiphu ecaba
Impendulo yesantya esiphezulu
Uvakalelo oluphezulu lwe-detector

Usetyenziso

Uluhlu lweLaser
Laser unxibelelwano
Isilumkiso seLaser

Ipharamitha yefoto yombane(@Ta=22±3℃）

Into #	Udidi lwepakethi	Idayamitha yomphezulu obonayo (mm)	Uluhlu lweempendulo zeSpectral (nm)	Ukutshatyalaliswa kwamandla ombane (V)	Ukuphendula M=10 λ=1550nm (kV/W)	Ixesha lokunyuka (ns)	Ububanzi (MHz)	I-Coefficient yobushushu T_a=-40℃～85℃ (V/℃)	Ingxolo elingana namandla(pW/√Hz)	Ukugxila (μm)	Uhlobo olubuyiselwe kwamanye amazwe
GD6510Y	UKUYA-8	0.2	1000 ~1700	30 ~ 70	340	5	70	0.12	0.15	≤50	C3059-1550-R2A
GD6511Y		0.5				10	35		0.21		−
GD6512Y		0.08				2.3	150		0.11		C3059-1550-R08B