UMGCINI

UMGCINI

  • 355nm APD

    355nm APD

    Yifotodiode ye-Si avalanche enomgangatho omkhulu wefoto kunye ne-UV eyongeziweyo.Ibonelela ngovakalelo oluphezulu ukusuka kwi-UV ukuya kwi-NIR.

  • 800nm ​​APD

    800nm ​​APD

    Yi-Si avalanche photodiode ebonelela ngovakalelo oluphezulu ukusuka kwi-UV ukuya kwi-NIR.Incopho yobude bokuphendula yi-800nm.

  • 905nm APD

    905nm APD

    Yi-Si avalanche photodiode ebonelela ngovakalelo oluphezulu ukusuka kwi-UV ukuya kwi-NIR.Incopho yobude bokuphendula yi-905nm.

  • 1064nm APD

    1064nm APD

    Yi-Si avalanche photodiode ebonelela ngovakalelo oluphezulu ukusuka kwi-UV ukuya kwi-NIR.Incopho yokuphakama kwamaza yi-1064nm.Ukuphendula: 36 A / W kwi-1064 nm.

  • Iimodyuli ze-1064nm ze-APD

    Iimodyuli ze-1064nm ze-APD

    Iyaphuculwa imodyuli ye-Si avalanche photodiode kunye nesekethe yokwandiswa kwangaphambili eyenza ukuba uphawu lwangoku olubuthathaka lwandiswe kwaye luguqulwe lube ngumqondiso wombane ukufezekisa inkqubo yokuguqulwa kwe-photon-photoelectric-signal amplification.

  • Iimodyuli ze-InGaAs APD

    Iimodyuli ze-InGaAs APD

    Yimodyuli ye-indium gallium arsenide avalanche photodiode kunye nesekethe yokukhulisa kwangaphambili eyenza ukuba uphawu olubuthathaka lwangoku lwandiswe kwaye luguqulelwe kwisignali yombane ukufezekisa inkqubo yokuguqulwa kwe-photon-photoelectric-signal amplification.

  • I-APD enezine ezine

    I-APD enezine ezine

    Iqulathe iiyunithi ezine ezifanayo ze-Si avalanche photodiode ebonelela ngovakalelo oluphezulu ukusuka kwi-UV ukuya kwi-NIR.Incopho yobude bokuphendula ngamaza ngama-980nm.Ukuphendula: 40 A / W kwi-1064 nm.

  • Iimodyuli ezine-quadrant APD

    Iimodyuli ezine-quadrant APD

    Iqulathe iiyunithi ezine ezifanayo ze-Si avalanche photodiode kunye nesekethe yokwandiswa kwangaphambili eyenza ukuba isignali yangoku ebuthathaka yandiswe kwaye iguqulwe ibe ngumqondiso wombane ukufezekisa inkqubo yokuguqulwa kwe-photon-photoelectric-signal amplification.

  • Iimodyuli ze-PIN ze-850nm

    Iimodyuli ze-PIN ze-850nm

    Yimodyuli ye-850nm ye-PIN ye-photodiode enesekethe yokukhulisa kwangaphambili eyenza ukuba isignali yangoku ebuthathaka yandiswe kwaye iguqulelwe kwisignali yombane ukufezekisa inkqubo yokuguqulwa kwe-photon-photoelectric-signal amplification.

  • 900nm Si PIN photodiode

    900nm Si PIN photodiode

    Yi-Si PIN photodiode esebenza phantsi komkhethe kwaye ibonelela ngovakalelo oluphezulu ukusuka kwi-UV ukuya kwi-NIR.Incopho yobude bokuphendula yi-930nm.

  • I-1064nm ye-PIN yefotodiode

    I-1064nm ye-PIN yefotodiode

    Yi-Si PIN photodiode esebenza phantsi komkhethe kwaye ibonelela ngovakalelo oluphezulu ukusuka kwi-UV ukuya kwi-NIR.Incopho yobude bokuphendula ngamaza ngama-980nm.Ukuphendula: 0.3A / W kwi-1064 nm.

  • Iimodyuli ze-Fiber Si PIN

    Iimodyuli ze-Fiber Si PIN

    Isiginali ye-Optical iguqulwa ibe ngumqondiso wangoku ngokufaka i-fiber optical.Imodyuli ye-Si PIN inesekethe yokwandiswa kwangaphambili eyenza ukuba isignali yangoku ebuthathaka yandiswe kwaye iguqulelwe kwisignali yombane ukufezekisa inkqubo yokuguqulwa kwe-photon-photoelectric-signal amplification.

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