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Iimodyuli ze-InGaAs APD

Iimodyuli ze-InGaAs APD

Umzekelo: GD6510Y/ GD6511Y/ GD6512Y

Inkcazelo emfutshane:

Yimodyuli ye-indium gallium arsenide avalanche photodiode kunye nesekethe yokukhulisa kwangaphambili eyenza ukuba uphawu olubuthathaka lwangoku lwandiswe kwaye luguqulelwe kwisignali yombane ukufezekisa inkqubo yokuguqulwa kwe-photon-photoelectric-signal amplification.


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  • 6dac49b1
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  • 374a78c3

IParameter yobuGcisa

Iithegi zeMveliso

Iimbonakalo

  • Umphambili wakhanyisa itshiphu ecaba
  • Impendulo yesantya esiphezulu
  • Uvakalelo oluphezulu lwe-detector

Usetyenziso

  • Uluhlu lweLaser
  • Laser unxibelelwano
  • Isilumkiso seLaser

Ipharamitha yefoto yombane(@Ta=22±3℃

Into #

 

 

Udidi lwepakethi

 

 

Idayamitha yomphezulu obonayo (mm)

 

 

Uluhlu lweempendulo zeSpectral

(nm)

 

 

Ukutshatyalaliswa kwamandla ombane

(V)

Ukuphendula

M=10

λ=1550nm

(kV/W)

 

 

 

 

Ixesha lokunyuka

(ns)

Ububanzi

(MHz)

I-Coefficient yobushushu

Ta=-40℃~85℃

(V/℃)

 

Ingxolo elingana namandla(pW/√Hz)

 

Ukugxila (μm)

Uhlobo olubuyiselwe kwamanye amazwe

GD6510Y

 

 

UKUYA-8

 

0.2

 

 

1000 ~1700

30 ~ 70

340

5

70

0.12

0.15

≤50

C3059-1550-R2A

GD6511Y

0.5

10

35

0.21

GD6512Y

0.08

2.3

150

0.11

C3059-1550-R08B


  • Ngaphambili:
  • Okulandelayo: