Uthotho lwemodyuli ye-InGaAS-APD ebonisiweyo

Uthotho lweemodyuli ze-InGaAS-APD

Umzekelo: GD6510Y / GD6511Y / GD6512Y

Inkcazelo emfutshane:

Isixhobo yimodyuli ye-avalanche photodiode ye-InGaAs kunye nesiphaluka esakhelwe ngaphakathi se-preamplifier, esinokuguqula ababuthathaka.Emva kokuba umqondiso wangoku unyusiwe, uguqulwa ube yimveliso yesignali yombane ukuze uqonde inkqubo yokuguqula "i-optical-electrical-signal amplification".

fumana ikhowuti Khuphela

IParameter yobuGcisa

IIMBONAKALO

ISICELO

Iithegi zeMveliso

Iimpawu zombane wefoto (＠Ta＝22±3℃)
Umzekelo	GD6510Y	GD6511Y	GD6512Y
Ifomu yephakheji	UKUYA-8	UKUYA-8	UKUYA-8
Umphezulu wedayamitha yefotoensitive (mm)	0.2	0.5	0.08
Uluhlu lweempendulo zeSpectral (nm)	1000~1700	1000~1700	1000~1700
Ukutshatyalaliswa kwamandla ombane (V)	30~70	30~70	30~70
Impendulo M=10 l=1550nm(kV/W)	340	340	340
Ixesha lokunyuka (ns)	5	10	2.3
Ububanzi (MHz)	70	35	150
Amandla engxolo alinganayo (pW/√Hz)	0.15	0.21	0.11
I-coefficient yobushushu bombane osebenzayo T=-40℃~85℃(V/℃)	0.12	0.12	0.12
Ukugxila (μm)	≤50	≤50	≤50
Iimodeli ezizezinye zentsebenzo efanayo kwihlabathi liphela	C3059-1550-R2A	/	C3059-1550-R08B

Isakhiwo seChip sePlanethi engaphambili

Ukuphendula ngokukhawuleza

Uvakalelo oluphezulu lwesixhobo

Uluhlu lweLaser

Lidar

Isilumkiso seLaser