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800nm ​​APD

800nm ​​APD

Umzekelo: GD5210Y-1-2-TO46/ GD5210Y-1-5-TO46/ GD5210Y-1-2-LCC3/ GD5210Y-1-5-LCC3

Inkcazelo emfutshane:

Yi-Si avalanche photodiode ebonelela ngovakalelo oluphezulu ukusuka kwi-UV ukuya kwi-NIR.Incopho yobude bokuphendula yi-800nm.


  • f614effe
  • 6dac49b1
  • 46bbb79b
  • 374a78c3

IParameter yobuGcisa

Iithegi zeMveliso

Iimbonakalo

  • Umphambili wakhanyisa itshiphu ecaba
  • Impendulo yesantya esiphezulu
  • Ukuzuza okuphezulu kwe-APD
  • Umthamo ophantsi wokuhlangana
  • Ingxolo ephantsi

Usetyenziso

  • Uluhlu lweLaser
  • Irada yeLaser
  • Isilumkiso seLaser

Ipharamitha yefoto yombane(@Ta=22±3℃

Into #

Udidi lwepakethi

Idayamitha yomphezulu obonayo (mm)

Uluhlu lweempendulo zeSpectral (nm)

 

 

Incopho yobude bewavenge

Ukuphendula

λ=800nm

φe=1μW

M=100

(A/W)

Ixesha lokuphendula

λ=800nm

RL=50Ω

(ns)

Umsinga omnyama

M=100

(n / A)

I-Coefficient yobushushu

Ta=-40℃~85℃

(V/℃)

 

Amandla onke

M=100

f=1MHz

(pF)

 

Ukutshatyalaliswa kwamandla ombane

IR=10μA

(V)

Isichwethezo.

Max.

Min

Max

GD5210Y-1-2-TO46

UKUYA-46

0.23

 

 

 

400-1100

 

 

 

 

800

 

55

 

 

 

 

0.3

0.05

0.2

0.5

1.5

80

160

GD5210Y-1-5-TO46

UKUYA-46

0.50

0.10

0.4

3.0

I-GD5210Y-1-2-LCC3

I-LCC3

0.23

0.05

0.2

1.5

I-GD5210Y-1-5-LCC3

I-LCC3

0.50

0.10

0.4

3.0


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